摘要
以有机配合物(PPQ)2Ir(acac)为发光掺杂剂,稀土配合物Tb(eb-PM IP)3(TPPO)为主体材料,用铟锡氧化物(ITO)和铝分别作正负电极,采用真空蒸镀制备电磷光有机发光二极管.该器件发射红色光,主峰位于615 nm,是磷光分子(PPQ)2Ir(acac)的特征发射.通过器件结构和浓度优化,器件的最大发光效率达3.14 cd/A,在较高的电流密度下,该器件的电致发光效率无明显衰减.实验结果表明,带有相对较宽能隙配体的稀土配合物可能是制备高电流密度且稳定的电磷光有机发光二极管较好的主体材料.
This paper covers organic electrophosphorescent light-emitting diodes with organic phosphorescent compound (PPQ)EIr(acac) as dopant and rare-earth complex Tb(eb-PMIP)3 (TPPO)as host. The devices were fabricated via vacuum evaporation with indium-tin-oxide as an anode and LiF/Al as a cathode. A red light with a peak at 615 nm was observed, the characteristic emission from the triplet state of ( PPQ)2Ir (acac). A maximum emissive efficiency of 3. 14 cd/A was obtained by optimizing device structure and the dopant content. The experimental results demonstrate that rare-earth complexes with wider band gap ligands may be promising materials as host in highly stable organic electrophosphorescent light-emitting diodes.
出处
《吉林大学学报(理学版)》
CAS
CSCD
北大核心
2005年第5期638-641,共4页
Journal of Jilin University:Science Edition
基金
中国科学院"百人计划"项目基金
国家自然科学基金(批准号:90301003)
国家重点基础研究发展规划"973"项目基金(批准号:2002CB613403)
吉林省杰出青年科学基金
关键词
有机电磷光
稀土配合物
发光二极管
T-T淬灭
organic electrophosphorescence
rare-earth complex
light-emitting diode
T-T annihilation