摘要
溅射镀膜方法是制备ITO透明导电膜最常用也是实验研究最多的方法。实验使用一种不同于溅射方法的另一种制备工艺—低压反应离子镀方法—制备ITO透明导电膜。实验对不同沉积速率和不同氧气流量对ITO透明导电膜的方块电阻以及光学透过率的影响进行了详细地分析,并综合比较得到了当沉积速率为0.5nm/s,氧气流量为24cm3/min时,在波长为550nm处,方块电阻为20Ω,λ=550nm透过率为90.8%的优质ITO透明导电膜。
High quality ITO transparent conductive film was prepared by reactive low voltage ion plating technique, which is different to the most common sputtering method to deposit ITO film. With this method, ITO film with high transmittance of 90.8% at 550nm and low sheet resistance of 20Ω/□ was obtained. The influence of the deposition rate and oxygen flow rate on the transmittance at 550nm and the sheet resistance were measured and discussed. With the deposition rate increased, the transmittance at 550nm and the sheet resistance of the ITO film both decreased. The transmittance of the film gradually increased when the oxygen flow rate increased. But the sheet resistance decreased a little at first, then elevated with the increasing oxygen flow rate. From the experiments, it was found that the best deposition rate and oxygen flow rate to prepare the ITO film would be 0.5nm/s, 24 cm^3/min respectively when the substrate temperature was 400℃.
出处
《光学技术》
EI
CAS
CSCD
北大核心
2005年第5期669-671,共3页
Optical Technique
基金
国防科工委资助项目[MKPT-01-111(ZD)]
关键词
低压反应离子镀
ITO透明导电膜
透过率
方块电阻
reactive low voltage ion plating
ITO transparent conductive film
transmittance
sheet resistance
