摘要
描述了目前采用的界面效应、合金效应、覆盖效应和回流效应等四种提高半导体器件金属化和接触可靠性的方法及其特点。介绍了最新研究成果，展望了其应用前景。
One of the most serious problems with the diminishing devices is the failure in metallization and ohmic contacts. Four techniques to improve the reliability of metallization and ohmic contacts in semiconductor devices are described,together with their characteristics. These methods include interface effect, alloy effect, covering effect of medium and backflow effect. The updated achievements in this field are introduced,and the application prospect is viewed.
出处
《微电子学》
CAS
CSCD
1996年第4期235-239,共5页
Microelectronics
关键词
半导体器件
金属化
欧姆接触
可靠性
Semiconductor device
Metallization
Ohmic contact
Reliability
