摘要
用循环伏安法研究了Sn2+在金盘电极上的欠电位沉积.在特别提纯的1mol/LHCl支持电解质溶液中,Sn2+在金盘电极上可以产生清晰的欠电位沉积峰和本体沉积峰.基于Au/Sn欠电位体系优良的电化学特性,发展了一种选择性好、灵敏度高的电化学分析方法.Sn2+浓度在1.96×10-10-2.91×10-8mol/L范围内与峰电流有线性关系.连续7次测定1.0x10-9mol/LSn2+得到的相对标准偏差为5.06%.该方法已用于实际样品的测定,所得结果与原子发射光谱(ICP-AES)所得数据相吻合.
The underpotential deposition（UPD） of Sn^2＋ on gold disc electrode was studied using cyclic voltammetry. In this case a new method for determining Sn^2＋ was developed. A high sensitive electroanalytical technique, the differential pulse anodic stripping voltammetry（DPASV）, was used. Factors affecting the Sn^2＋ UPD and stripping steps were investigated and an optimized analytical procedure was proposed, The calibration plot for Sn^2＋ concentration in a wider range 1.96×10^-10～2.91×10^-8 mol/L was obtained, The developed method was applied to tin determination in the tinplate sample and method was validated with inductive coupled plasma atomic emission spectrometry（ICP-AES）,
出处
《兰州大学学报（自然科学版）》
CAS
CSCD
北大核心
2005年第5期61-64,共4页
Journal of Lanzhou University(Natural Sciences)
基金
Supported by National Natural Science Foundation of China(20073017).
关键词
锡
欠电位沉积
金盘电极
测定
tin
underpotential deposition
gold disc electrode
determination
