摘要
采用厚层正性光刻胶AZ P4620进行光刻实验,考察了在前烘和坚膜阶段不同的工艺参数条件下的光刻胶浮雕面形的变化。实验表明,完全显影后光刻胶的浮雕面形受前烘工艺参数的影响很小,但其显影速率有一定差别;当坚膜烘焙后,不同前烘条件下的浮雕面形差别较大;当前烘条件相同时,坚膜参数的变化对光刻胶的浮雕面形影响较大。由此得出,在前烘阶段应采取较高温度、较短时间的烘焙,而在坚膜阶段应采取较低温度、较长时间的烘焙,这样可提高厚胶光刻面形的质量。
Clariant Corporation AZ P4620 positive photoresist is used for this investigation. Effect of baking process conditions on surface profile of thick film resists is investigated, and the simulated photoresist profiles were compared with patterns obtained from experiment. Results show that soft baking and hard baking have different impact on surface profile of thick film resists. In order to obtain surface profile with high quality, the higher temperature and shorter time should be adopted during soft baking, while lower temperature and longer time should be preferable during hard baking.
出处
《微细加工技术》
EI
2005年第3期31-35,共5页
Microfabrication Technology
基金
国家自然科学基金资助项目(60276018)
中科院光电所微细加工技术国家重点实验室资助课题
关键词
厚胶光刻
前烘
坚膜
光刻面形
lithography for thick film resists
soft baking
hard baking
surface profile of lithography
