摘要
为了研究掺杂BarSr1-xTiO3介电薄膜材料的性能,采用阻抗分析仅等测试方法研究了微量元素钇对Sr0.5Ba0.5-yYyTiO3薄膜介电性能的影响。当Y元素的掺量为0-0.030mol时,相对介电常数εr和tanδ分别为74.2和0.067;最大介电常数温度点Tm(居里温度点)逐渐移向低温;在所测试频率范围内,Y元素的掺量为0.010、0.0150mol(Y2、Y3)时,εr、tanδ均能表现出较好的频散特性。采用XRD、TEM等测试方法分析了薄膜的结构特征。薄膜的矿物组成为四方钙钛矿结构,但Y的溶入改变了晶胞参数的c/a比,减小了薄膜的颗粒尺寸,提高了薄膜的致密度;晶粒的生长为取向一致和无取向生长两种方式。
The influences of trace element yttrium （Y） on the dielectric properties of Sr0.5Ba0.5-yYuTiO3 （SBT, y=0,0.007, 0.010, 0.015, 0.020, 0.025, 0.030 mol） films were studied by means of impedance analyzer to discuss the properties of doped BaxSr1-xTiO3 dielectric flims.The dielectric constant （ε ,r）,dielectric loss （tanδ）was improved respectively,for maximum ε r（Curie temperature） moved to lower temperature with the amount of Y increase. Better scattering frequency characteristics appeared for thin films with Y amount 0.010 and 0.015 mol in the scope of test frequency.The microstructure of SBT thin films was studied by XRD ,TEM. Tetragonal perovskit srystal grains existed in SBT thin films ,but the grain size was decreased when dopant Y was doped in SBT.The ratios c/a of crystalline cell parameters of SBT was varied,and the density was increaesd. Growth for crystal grains was orientation or disorder.
出处
《中国粉体技术》
CAS
2005年第5期1-5,共5页
China Powder Science and Technology
基金
国家自然科学基金项目资助
编号:50371047
关键词
SBT介电薄膜材料
介电性能
施主掺杂
结构特征
SBT thin films
dielectric constant
dielectric loss
Y dopant
characteristic microstructure.
