摘要
对用常压化学气相淀积（ＡＰＣＶＤ）工艺制备的纯α－Ｆｅ２Ｏ３薄膜和掺锆（Ｚｒ）α－Ｆｅ２Ｏ３薄膜的气敏特性进行了研究。实验表明掺Ｚｒ是改善α－Ｆｅ２Ｏ３薄膜材料气敏特性的一种有效途径。
The gas-sensing properties of pure α- Fe2O3 and Zr-doping α-Fe2O3 thin films prepared by atmospheric pressure chemical vapotur deposition (APCVD) are investigated. Experimental results indicated that Zr-doping is an effective method to improve the gas-sensing preperties of α-Fe2O3 thin films.
出处
《传感器技术》
CSCD
1996年第2期15-18,共4页
Journal of Transducer Technology
