摘要
提出了一种ＣＭＯＳＳＲＡＭ读出灵敏放大器的新结构。该放大器同传统的ＰＭＯＳ电流镜放大器和ＰＭＯＳ交叉耦合放大器相比，具有速度快、增益大、功耗小等特点，可广泛应用于ＳＲＡＭ的设计中。最后，用ＨＳＰＩＣＥ的仿真结果证明了该设计的正确性及其优点。
A new structure of CMOS SRAM sense amplifier is proposed. Compared with conventional PMOS current-mirror sense amplifier and PMOS cross-couple sense amplifier, it has the characteristics of high speed, high gain and low power, and can be widely used in SRAM design.The advantages of this structure have been verified by HSPICE simulation on a SUN SPARC 10 workstation.
出处
《微电子学》
CAS
CSCD
1996年第2期88-91,共4页
Microelectronics
