摘要
研究了20℃￣-70℃栅宽为100μm、栅长为1μm的AlGaN/GaNHEMT的直流特性。随温度降低,电子迁移率增大,而二维电子气密度基本不变,HEMT饱和漏电流IDsat增大;阈值电压低温时有所下降,在一定温度范围内变化不明显,其原因除栅肖特基势垒高度、AlGaN/GaN导带差发生变化外,还可能与器件制备工艺和源极串联电阻有关。
Studied the DC characteristic of A1GaN/GaN HEMT between 20-70℃. The gate width and length were 100μm and 1μm, respectively. As the temperature decreased, the HEMT＇s saturation drain current increased, the percentage of which was 50.47%, because of the increase of electron mobility although the density of tow dimension electron gas （2DEG） nearly changed. At the same time, the threshold voltage, which didn＇t change clearly in the certain range of temperature, had a little decrease. The processing and series resistance might be the reasons except for the change of the Schottky gate barrier height and the discontinuity of conduction level between AlGaN and GaN.
出处
《微电子学与计算机》
CSCD
北大核心
2005年第11期7-9,共3页
Microelectronics & Computer
