摘要
利用LPCVD制备重掺杂多晶硅薄膜，在0-560℃温度范围内对薄膜的压阻效应进行研究，同时对多晶硅薄膜应变系数随温度的变化，以及薄膜的淀积温度与薄膜厚度对应变系数的影响进行了相关的实验研究．结果表明，利用多晶硅材料制作的压敏电阻，其最高工作温度可以达到560℃以上．
The high-temperature piezoresistive effect of polysilicon films is investigated. The relation between gauge factors of heavy doped polysilicon films deposited by LPCVD and tern. peratures is researched and attained,considering experimental influences of deposition temperature and film thickness on gauge factors. Polysilicon films with a Boron-doped concentration of about 1019 cm-3 are experimentally studied from room temperature to 560℃. Experimental results show that the polysilicon piezoresistors can work over 560℃.
基金
国家高技术研究发展计划资助项目(批准号:2002AA404200)~~
关键词
压阻效应
多晶硅
应变系数
piezoresistive effect
polysilicon
gauge factor
