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MOCVD法制备ZnO同质发光二极管 被引量：10

Fabrication of ZnO Light-Emitting Diode by Using MOCVD Method
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摘要 在n型ZnO体单晶片上,首次采用N等离子体辅助金属有机化学气相沉积方法外延生长了p型ZnO薄膜,制成了同质ZnO的发光二极管(LED)原型器件;在室温下,观察到同质ZnO的LED施加电压后由电注入激发出紫外至绿光波段的光谱. p-type zinc oxide （ZnO） thin films are grown by plasma-assisted metalorganic chemical vapor deposition （MOCVD）. A ZnO homostructural light-emitting diode is fabricated by growing p-type ZnO epi-layer on n-type bulk ZnO wafer. The room temperature electroluminescence spectrum from violet to green regions is observed while the ZnO-LED is supplied with a DC voltage.
作者 叶志镇 徐伟中 曾昱嘉 江柳 赵炳辉 朱丽萍 吕建国 黄靖云 汪雷 李先杭
机构地区 浙江大学硅材料国家重点实验室
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第11期2264-2266,共3页 半导体学报（英文版）
基金 国家重点基础研究专项经费(批准号:G2000068306) 国家自然科学基金(批准号:90201038) 香港-大陆两地基金资助项目~~
关键词 ZNO LED P型掺杂 金属有机化学气相沉积 ZnO LED p-type doping metalorganic chemical vapor deposition
分类号 TN312.8 [电子电信—物理电子学]
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参考文献8

  • 1Ye Zhizhen,Ma Dewei, He Junhui, et al. Structural and photo-luminescent properties of ternary Zn1-xCdxO crystal films grown on Si(111) substrates. J Cryst Growth,2003,256:78.
  • 2徐伟中,叶志镇,周婷,赵炳辉,朱丽萍,黄靖云.MOCVD法以NO气体为掺杂源生长p型ZnO薄膜[J].Journal of Semiconductors,2005,26(1):38-41. 被引量：13
  • 3Ye Zhizhen, Lu Jianguo, Chen Hanhong, et al. Preparation and eharaeteristies of p-type ZnO films by DC reaetive magnetron sputtering. J Cryst Growth, 2003,253(1-4): 258.
  • 4Nakahara K,Takasu H,Fons P,et al.Growth of N-doped and Ga + N-codoped ZnO films by radical source molecular beam epitaxy.J Cryst Growth,2002,237:503.
  • 5Li X, Yan Y, Gessert T A, et al. Chemical vapor deposition-formed p-type ZnO thin films. J Vae Sci Technol,2003,21(4):1342.
  • 6Look D C, Reynolds D C, Litton C W, et al. Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy.Appl Phys Lett, 2002,81(10): 1830.
  • 7Tsukazaki A, Ohtomo A, Onuma T, et al. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO. Natural Materials, 2005,4: 42.
  • 8Xu W Z, Ye Z Z, Ma D W, et al. Quasi-aligned ZnO nanotubes grown on Si substrates. Appl Phys Lett,2005,87:093110.

二级参考文献10

  • 1Ye Zhizhen,Ma Dewei,He Junhui,et al.Structural and photoluminescent properties of ternary Zn1-xCdxO crystal films grown on Si(111) substrates.J Cryst Growth,2003,256:78.?A
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  • 3Nakahara K,Takasu H,Fons P,et al.Growth of N-doped and Ga+N-codoped ZnO films by radical source molecular beam epitaxy.J Cryst Growth,2002,237:503.
  • 4Li X,Yan Y,Gessert T A,et al.Chemical vapor deposition-formed p-type ZnO thin films.J Vac Sci Technol,2003,21(4):1342.
  • 5Look D C,Renolds D C,Litton C W,et al.Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy.Appl Phys Lett,2002,81(10):1830.
  • 6Lee E C,Kim Y S,Jin Y G,et al.Compensation mechanism for N acceptors in ZnO.Phys Rew B,2001,64(8):085120.
  • 7Yan Yanfa,Zhang S B.Control of doping by impurity chemical potentials:predictions for p-type ZnO.Phys Rev Lett,2001,86(25):5723.
  • 8Garces N Y,Giles N C,Halliburton L E,et al.Production of nitrogen acceptors in ZnO by thermal annealing.Appl Phys Lett,2002,80(8):1334.
  • 9Khan M A,Chen Q,Skogman R A,et al.Violet-blue homojunction light emitting diode with repid thermal annealed p-type layers.Appl Phys Lett,1995,66(16):2046.
  • 10王卿璞,张德恒,薛忠营.射频磁控溅射ZnO薄膜的光致发光[J].Journal of Semiconductors,2003,24(2):157-161. 被引量：19

共引文献12

同被引文献200

引证文献10

二级引证文献12

Journal of Semiconductors
2005年 第11期

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