摘要
本文简述了中子辐照对ＩＧＢＴ特性的影响，给出了器件在中子辐射注量高达１０１３ｎ／ｃｍ２时的实验结果。实验发现，随着中子注量的增加，开关时间缩短、阈值电压漂移。对于所研究的注量范围，所观察的效应是由于ＩＧＢＴ少子寿命减少造成的，而不是由于有效掺杂浓度变化所致。
In this paper the effects of neutron radiation on the characteristics of IGBT are simply described. Experimental results are presented for devices that have been irradiated up to a fluence of 10 13 n/cm 2.It is found that the switching time decreases and the threshold voltage shift with increasing neutron fluence. For the range of fluences studied,the observed effects result from a reduction in minority carrier lifetime in the IGBT and not from changes in the effective dopant density.
