摘要
本文主要研究集成电路硅片上缺陷的空间分布．在详细考察缺陷空间成团（Ｃｌｕｓｔｅｒ）效应的基础上，提出了一个新的描述缺陷空间分布的量——分数维，并建立了一个结构化的模型．用分数维对缺陷的成团效应及其空间分布进行详细地分析和计算机模拟，并验证了结果的正确性．本文为实现集成电路可制造性设计中的功能成品率精确表征奠定了基础．
The defect spatial distributions on the wafer of IC' s are studied. Based on the research of the spatial cluster effect of defect,a novel number-fractional dimension for describing the defect spatial distributions is proposed and a constructive fractal model is obtained. The defect spatial distributions and cluster are analysed in detail and simulated by means of the fractal model,and the correct results are given. The model can express the functional yield accurately and lay the foundation of design for manufacturability of IC's.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1996年第8期10-14,共5页
Acta Electronica Sinica
基金
国家863高科技项目资助
国家教委博士点基金
关键词
缺陷空间分布
成团效应
集成电路
硅片
Defect spatial distributions
Cluster effect
Fractional dimension
Functional yiedl
