摘要
研究了80C31单片机电路在60Coγ辐照环境中的响应特性及参数变化规律,通过对辐照后其电离辐照敏感参数在室温和100℃高温条件下随时间变化关系的分析,讨论了电路总剂量辐射损伤的机理。
Effects of ionizing radiation on 80C31 microcontroller were investigated. Its response characteristics and parameter variation under total dose irradiation were studied. Furthermore, results of post-irradiation annealing test at room- and high-temperature （100 ℃） were analyzed, and failure mechanisms caused by total dose radiation were discussed.
出处
《微电子学》
CAS
CSCD
北大核心
2005年第6期584-586,590,共4页
Microelectronics
关键词
单片机
^60Coγ辐照
辐射损伤
退火
Microcontroller
^60Co Gamma irradiation
Radiation damage
Annealing
