摘要
首次报道了HgCdTe焦平面探测器微台面列阵成形工艺的干法技术有关刻蚀速率的一些研究结果。从HgCdTe外延材料的特点出发,详细分析了其干法刻蚀适用的R IE(ReactiveIon Etching)设备、刻蚀原理以及刻蚀速率的影响因素。采用ICP(Inductively Coupled Plasma)增强型R IE技术,研究了一种标准刻蚀条件的微负载效应(etch lag)对刻蚀速率的影响,以及刻蚀非线性问题,并获得刻蚀速率随时间的关系。
Some research results of dry technique on the etch rate of forming micro-mesa arrays for HgCdTe IRFPAs （Infrared Focal Plane Arrays） detector are presented. The available RIE equipments, etch principle and influencing factors of etch rate are analyzed respectively according to the characteristics of HgCdTe epitaxy material. The influence of etch rate caused by etch lag of a standard etch process is studied by using inductively coupled plasma enhanced reactive ion etching technique. Etch non-linearity of the standard etch process is also investigated, and then the relation between etch rate and time is obtained.
出处
《激光与红外》
CAS
CSCD
北大核心
2005年第11期829-831,共3页
Laser & Infrared
