期刊文献+

偏压对空心阴极放电等离子体溅射制备氮化碳薄膜的影响 被引量:1

Effect of bias voltage on the formation of CN_x films in hollow cathode type discharge plasma sputtering techniques
下载PDF
导出
摘要 利用空心阴极放电等离子体源在Si(100)单晶衬底上沉积了氮化碳薄膜.薄膜的表面形貌表明所得的薄膜非常的均匀光滑.用X光电子能谱、拉曼和红外吸收光谱对薄膜的结构、成分和化学键等进行了研究.在拉曼光谱中可以看到典型的G,D和C N键的峰.当偏压为250 V时,薄膜拉曼光谱中的D峰完全消失,此时薄膜的N/C比达到了0.81.通过对薄膜的XPS分析也表明薄膜中C—C,sp2CN和sp3CN键的组分也发生了明显的变化.当偏压为250 V时薄膜的sp3CN相的含量达到了最大值为40%,同时氮含量也达到了最大值.实验结果给出了直接的证据:薄膜的结构模式可以通过改变偏压来得到控制. Carbon nitride films are deposited on Si (100) single-crystalline wafers by DC hollow cathode discharge (DC-HCD) type plasma. The surface morphology of the film indicates the very smooth and uniform CN, films have been obtained. The structures, compositions and chemical bonding states of the obtained films are investigated by using SEM, XPS, Raman and FTIR. Typical G, D and C^N bands are identified. The bias voltage of 250 V results in a complete disappearance of Dband in Raman spectrum of the film. Consequently, the obtained maximal N/C ratio is up to 0.81. Obvious variations of components ratio among C--C, sp^2CN and sp^3bonds are also observed based on XPS of the films. The maximal fraction of sp^3CN bond up to 40% and N content at the bias voltage of 250 V is obtained. The experimental results show direct evidence that the modes of the films could be controlled by variations of bias voltage.
出处 《物理实验》 2005年第12期15-19,共5页 Physics Experimentation
基金 上海市科学技术发展基金项目(No.0252nm110) 教育部科学技术研究重点项目(No.03077) 波多黎各大学启动基金
关键词 氮化碳薄膜 直流空心阴极放电 偏压 CN film DC-HCD bias voltage
  • 相关文献

参考文献15

  • 1Takadoum J,Rauch J Y,Cattenot J M,et al.Comparative study of mechanical and tribological properties of CNx and DLC films deposited by PECVD technique [J].Surface and Coatings Technology,2003,174:427 ~433.
  • 2Bertran E,Pino F J,Viera G,et al.Application of FTIR phase-modulated ellipsometry to the characterisation of thin films on surface-enhanced IR absorption active substrates [J].Thin Solid Films,2001,381:6~9.
  • 3Wei A,Chen D.Influence of ions energy on the bonding structure of amorphous carbon nitride films [J].Mater.Chem.Phys.,2001,70:245~253.
  • 4Koumei B,Buriko H.Preparation and properties of nitrogen and titanium oxide incorporated diamondlike carbon films by plasma source ion implantation[J].Surface and Coating Technology,2001,136:192~196.
  • 5闫永辉,冯贤平,施芸城,唐晓亮.碳氮薄膜的制备及其拉曼光谱研究[J].物理实验,2004,24(9):16-19. 被引量:4
  • 6杨平,冯贤平,施芸城,闫永辉.空心阴极放电沉积氮化碳薄膜的结构和成键性质[J].物理实验,2005,25(9):13-16. 被引量:1
  • 7Cao Chunbao,Fu Jiyu,Zhu Hesun.Carbon nitride thin films deposited by cathodic electrodeposition[J].International Journal of Modern Physics B,2002,16:1 138~1 142.
  • 8Chen Z Y,Zhao J P,Yano T,et al.Valence band electronic structure of carbon nitride from X-ray photoelectron spectroscopy [J].Jouranl of Applied Physics,2002,92:281~287.
  • 9Zhou Zhimin,Xia L F,Sun Y.The influence of arc currents on the properties of carbon nitride films deposited by vacuum cathodic arc method[J].Thin Solid Films,2002,413:26~31.
  • 10Lascovich J C,Giorgi R,Scaglione S.Evaluation of the sp^2/sp^3 ratio in amorphous carbon structure by XPS and XAES [J].Appl.Surf.Sci.,1991,47:17~21.

二级参考文献35

  • 1闫永辉,冯贤平,施芸城,唐晓亮.碳氮薄膜的制备及其拉曼光谱研究[J].物理实验,2004,24(9):16-19. 被引量:4
  • 2Zhang Y P, Gu Y S. Effect of silicon impurity on carbon nitride films prepared by microwave plasma chemical vapor deposition[J]. Materials Science and Engineering B, 2001,38 : 85.
  • 3Sakamoto Y, Takaya M. Fabrication of nitrogen included carbon materials using microwave plasma CVD[J]. Surface and Coatings Technology, 2003,321:169 - 170.
  • 4Fu Yongqing, Sun Chang Q, Du Hejun, et al.From diamond to crystalline silicon carbonitride:effect of introduction of nitrogen in CH4/H2 gas mixture using MW-PECVD [J]. Surface and Coatings Technology, 2002,165:160.
  • 5Park S M, Lee K H. Angular distributions of C2and CN formed by laser ablation of graphite in a nitrogen atmosphere [J]. Applied Surface Science,2001,37:178.
  • 6Cheng Y H, Qiao X L, et al. Effect of laser fluences on the structure of carbon nitride films deposited by direct current plasma assisted pulsed laser ablation[J]. Surface and Coatings Technology, 2002,269:160.
  • 7Leonhardt A, Gruger H, et al. Preparation of CNxphases using plasma-assisted and hot filament chemical vapour deposition[J]. Thin Solid Films, 1998,69:332.
  • 8Liu X W, Chan L H, Hong K H, et al. Effect of bias voltage on the formation of a-C: N nanostructures in ECR plasmas[J]. Thin Solid Films, 2002,212:420-421.
  • 9Takadoum J, Ranch J Y, et al. Comparative study of mechanical and tribological properties of CNx and DLC films deposited by PECVD technique[J]. Surface and Coatings Technology, 2003, 427:174 -175.
  • 10Hubicka Z, Sycha M, et al. CNx coatings deposited by pulsed RF supersonic plasma jet: hardness,nitrogenation and optical properties [J]. Surface and Coatings Technology, 2001, 142-144:681 -687.

共引文献3

同被引文献6

引证文献1

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部