摘要
通过激光损伤实验,报道了GaN薄膜10.6μm CO2激光的损伤阈值是64 J/cm2;为了改善GaN薄膜质量,对其进行了10.6μm CO2激光辐照处理,结果表明,处理后GaN薄膜的缺陷密度明显降低。并对机理进行了分析。
Through laser damage experiment, the damage threshold of GaN thin film at 10.6tam is reported,i, e. 64J/cm^2. To improve the quality of GaN thin film,laser treating experiment is investigated by 10.6μm CO2 laser. The results show that the defect density is decreased great after treatment. Finally ,treating mechanism is analyzed.
出处
《激光技术》
CAS
CSCD
北大核心
2005年第6期652-653,656,共3页
Laser Technology
关键词
GAN薄膜
损伤阈值
激光处理
缺陷密度
GaN thin film
damage threshold
laser treatment
defect density
