摘要
对掺杂浓度为1017～1019cm-3的GaN:Si样品进行高精度X射线衍射和拉曼散射光谱的研究发现:随着Si掺杂浓度的增加,GaN晶粒尺寸逐渐减小,引发更多的螺位错和混合位错致使摇摆曲线的半高宽有所增加,同时薄膜中的剩余应力也逐渐减小。当掺杂浓度高于2.74×1018cm-3时,薄膜从压力状态转变为张力状态。
High resolution X-ray dittraction and Raman scttering are used to identify the property of GaN.Si films with doping concentration from 10^17 to 10^19 cm^-3. The results indicate that the crystallite size reduces as the doping concentration increasing and much more screw dislocation and mixed dislocation are introduced to widen the X-ray rocking curve and the residual stress reduces gradually. Furthemore, it is found that for a Si concentration of 2.74× 10^18 cm^-3, the strain changes from compressive stress to tensile stress.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2005年第4期485-488,共4页
Research & Progress of SSE
基金
国家重大基础研究项目(973计划)与预研项目(批准号:41308060106)支持研究
西安电子科技大学青年科研工作站资助(编号:03002#)
关键词
氮化镓
硅
异质外延
X射线衍射
拉曼散射
GaN.Si
heteroepitaxy
X-ray diffraction （XRD）
Raman scattering
