摘要
集成电路的集成度不断攀升,集成化器件的特征尺寸已进入超深亚微米层次。小尺寸制造进程、超微细结构及超低功耗的工作环境,使诸多寄生效应、小尺寸效应严重地影响着器件的性能、电路的寿命。本文论述了基于超深亚微米层次小尺寸效应的诱因分析及器件,重点剖析了陷阱效应、短沟效应、热载流子效应和栅氧击穿对器件可靠性的影响。在此基础上,提出了抑制小尺寸效应、提高器件失效阈值、保障器件可靠性的若干工艺措施。
With the riae of the integrated clrcult denslty, the characteristic, dimension has reached the very deep submicron level, For the small dimension process, ultra minuteness structure and ultra low power, some parasitic effects and small dimension offects seriousiy effect the performance and the lifetime of the clrcult. This article is based on the causes of the amall dimension effect, and analyze that how the trap effect. short channel effect.hot carriere effect and gata oxide breakdown affect the reliabllity, Based on the above, we put forward some measures which can restrain the small dimension effect ,elevate the threshold value and guarantee the reliablllty.
出处
《电子质量》
2005年第12期39-42,共4页
Electronics Quality
