摘要
分析了硅浅杂质能级的低温陷阶效应，给出了ｐ型硅中不同注入水平下导带中注入电子与总电子数目之比ｎ＿Ｃ／ｎ＿Ｔ的表达．主要结果表明在低注入条件下，浅杂质能级陷阱效应对于低温下双极器件的频率特性有着巨大影响；而在高注入水平下，由于总的注入电子数目大大超过被陷电子数目，从而克服了这一低温陷阱效应，可以忽略．
In this Paper,the.trapping effect of the shallow impurity energylevel in silicon at low temperatures is analyzed. The expression for the ratios of theinjeded electrons in the eonduction band to the total plectTons n./ny at f+xvariousinfortion levels in p--type silicon is given. The main. results indicate thatthe trapping effect of the shallow impurity energy level under the low injectioncondition will exert a tremendotie'influence on the frequency Ptbperlies of bipolardevices at low temperatures, and it becomes 'eligible at the high injection levelbecause the boaal injected electrons overwhelm the carrier trapping effeet.
出处
《应用科学学报》
CAS
CSCD
1996年第1期73-77,共5页
Journal of Applied Sciences
基金
国家自然科学基金
"八五"重点资助
关键词
硅
浅杂质能级
低温
陷阱效应
半导体
Silicon,Shallow Impurity Energy Level, Low Temperature,Trapping
