摘要
薄膜电阻器的低频噪声有别于常规电阻器的噪声特征,与其结构和工艺密切相关。通过溅射工艺生产的阻值为1.5k?镍铬薄膜电阻器分别在生产完成和1000h老化试验之后进行了低频噪声测量和分析得到器件低频噪声特征,结合电子元器件低频噪声理论探讨了器件中各种噪声成分的来源及产生机制并给出该镍铬薄膜电阻生产线降低噪声的工艺手段。并讨论了电迁移损伤对1/f噪声特征的影响,指出噪声的异常波动对电迁移损伤具有明确的指示作用。
Low frequency noise of thin-film resistor associate with it＇s micro-structures and technics closely. Low frequency noise data in different periods of three 1.5 kΩ NiCr thin-film resistors was measured. The resistor＇s noise characters and sources were discussed, the methods of reducing the noise were given. Furthermore, relationships between 1/f noise and electromigration in NiCr thin-film resistor were analyzed, the abnormal changes of noise can indicate electromigration destroy clearly.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2006年第1期55-58,65,共5页
Electronic Components And Materials
基金
国家自然科学基金资助项目(60376023)
关键词
电子技术
镍铬薄膜电阻
低频噪声
1/f噪声
G-R噪声
噪声来源
电迁移
electronic technology
NiCr thin-film resistor
low frequency noise； 1/f noisc； g-r noise
noise sources； electromigration
