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不同类型双极晶体管的低剂量率辐射损伤增强效应损伤机制 被引量：4

The Mechanism of Different Type Bipolar Transistors Enhanced Low Does Rate Sensitivity
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摘要 文章研究了双极晶体管不同温度的低剂量率辐射损伤增强效应,发现NPN晶体管与PNP晶体管的低剂量率辐射损伤机制是不相同的.最后文章讨论了其中可能的内在机制。 The article investigate the enhanced low dose rate sensitivity of the homemade bipolar transistors in different temperature. We find that the damage-mechanism of the enhanced low dose rate sensitivity between NPN transistors and PNP transistors is distinct. Possible mechanisms are discussed in the end.
作者 王先明 刘楚湘 魏蔚
机构地区 新疆师范大学数理信息学院
出处 《新疆师范大学学报（自然科学版）》 2005年第4期32-35,共4页 Journal of Xinjiang Normal University(Natural Sciences Edition)
关键词 双极晶体管 ELDRS 低剂量率辐射损伤增强效应 bipolar transistor ELDRS enhanced low dose rate sensitivity
分类号 TN322.8 [电子电信—物理电子学]
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参考文献9

  • 1[1]E.W-Enlow,R.L.Pease,W.E.Combs,R.D.Schrimpf,and R.N.Nowlin,"Response of Advanced Bipolar Processes to Ionizing Radiation."IEEE Trans.Nucl.Sci.1991,38(6):1342-1351
  • 2[2]D.M.Fleetwood,S.L.Kosier,R.N.Nowlin,et al."Physical MechanismContributing to Enhanced Bipolar Gain Degradation at LOw Dose Rates." IEEETrans.Nucl.Sci.1994,41 (6).1871-1883
  • 3[3]R.J.Graves,C.R.Cirba,R.D.Schrimpf,R.J.Milanowski,A.Michez,D.M.Fleetwood,S.C.Witczak,and F.Saigne,"Modeling Low-Dose-Rate Effects in Irradiated Bipolar-Base Oxides."IEEE Trans.Nucl.Sci.1998;45 (6):2302-2360
  • 4[4]S.C.Witczak,R.C.Lacoe,D.C.Mayer et al."Space charge limited degradatiOn of bipolar oxides at low electric fields." IEEE Trans Nucl Sci,1998,45 (6):2339-2351
  • 5[5]S.N.Rashkeev,C.R.Cirba,D.M.FleetwoOd,R.D.Schrimpf,S.C.Witczak,A.Michez,and S.T.Pantelides,"Physical Model for Enhanced Interface-Trap Formation at Low Dose Rates." IEEE Trans.Nucl.Sci.2002;49(6):2650-2655
  • 6[6]H.P.Hjalmarson,R.L.Pease,S.C.Witzack,M.R.Shaneyfelt #Mechanisms for Radiation Dose-Rate Sensitivity Of Bipolar Transistors" IEEE Trans-Nucl.Sci 2003;50 (6):1901-1909
  • 7[7]V.S.Pershenkov,V.B.Maslov,S.V.Cherepko,et al."The effect of emitter junction bias on the low dose rate radiation response of bipolar devices." IEEE Trans.Nucl Sci.1997,44(6).1840-1848.
  • 8[8]D.M.FleetwOOd,L.C.Rieve,et al "radiation effect at low electric field in thermal,SIMAX and bipolar-base oxides" IEEE Trans.Nucl Sci.1996,No (6) 2537
  • 9[9]R.N.Nowlin,E.W.Enlow,R.D.Shrimpf,et al "trends in the total-dose response of modern bipolar transistors." IEEE Trans.Nucl.Sci.1992,No (6) 2026

同被引文献36

引证文献4

二级引证文献6

新疆师范大学学报（自然科学版）
2005年 第4期

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