摘要
以铁基合金掺入硼铁粉为触媒剂,石墨为碳源,在高温高压条件下合成含硼金刚石。光学显微镜和Ram an散射仪观察了金刚石的表面形貌与晶体结构。用自制的电阻-温度测量仪对金刚石进行电阻-温度曲线进行测量,结果表明,随着温度升高,电阻逐渐降低,证明该金刚石具有负的电阻温度系数;继续升温,金刚石内的杂质发生电离,当杂质全部电离时,金刚石处于半导体的饱和区;温度进一步升高,金刚石进入本征电离区。
The boron-doped diamond single crystals were synthesized using boron-added Fe-based catalyst and graphite as carbon source under high temperature-high pressure. Optical microscope and Raman spectroscopy were used to investigate the morphology and structure of the boron-doped diamond. The relation curve of resistance-temperature was measured by a self-made resistance-temperature apparatus. The results demonstrated that the resistance gradually decreased with the temperature increasing, which means the diamond possesses negative coefficient of resistance-temperature. During heating the impurities in the diamond ionized and the diamond reached the saturation region of semiconductor once the ionization finished. Finally the diamond entered into intrinsic ionization at higher temperature.
出处
《金刚石与磨料磨具工程》
CAS
北大核心
2005年第6期10-12,共3页
Diamond & Abrasives Engineering
基金
国家自然科学基金(编号:No.50372035
50371048)
教育部高等学校博士点基金(编号:20020422035
20040422020)资助项目
关键词
含硼金刚石单晶
电阻温度系数
铁基触媒
boron-doped diamond
resistance-temperature coefficient
Fe-based catalyst
