摘要
193nm的ArF准分子激光光刻可将特征线宽推进到0.10μm。重点介绍了193nm薄膜的研究进展及影响薄膜性能的主要因素,并对具体的研究方向进行了总结。
For device dimensions down to 0.10μm, lithography using 193nm exposure wavelength based on ArF excimer laser as light source is forecasted. The research progress for 193nm optical coatings, the main factors to affect the properties of the coatings and the particular investigating direction are presented.
出处
《激光与光电子学进展》
CSCD
北大核心
2006年第1期11-14,共4页
Laser & Optoelectronics Progress
