摘要
介绍了SiC薄膜的一种主要制备方法———化学汽相沉积(CVD)法制备SiC薄膜的近年研究进展,并对所制备薄膜的结构特征与物理性质进行了简要评述。
The recent progress on fabricating methods of SiC films using chemical vapor deposition (CVD) was introduced, and the structural characteristics and physical properties of the CVD-SiC films were also reviewed.
出处
《微纳电子技术》
CAS
2006年第1期11-15,共5页
Micronanoelectronic Technology