期刊文献+

SiC薄膜的化学汽相沉积及其研究进展 被引量:10

Chemical Vapor Deposition of SiC Films and Its Progress
下载PDF
导出
摘要 介绍了SiC薄膜的一种主要制备方法———化学汽相沉积(CVD)法制备SiC薄膜的近年研究进展,并对所制备薄膜的结构特征与物理性质进行了简要评述。 The recent progress on fabricating methods of SiC films using chemical vapor deposition (CVD) was introduced, and the structural characteristics and physical properties of the CVD-SiC films were also reviewed.
出处 《微纳电子技术》 CAS 2006年第1期11-15,共5页 Micronanoelectronic Technology
关键词 SIC薄膜 化学汽相沉积 物理性质 器件应用 SiC film CVD physical properties device application
  • 相关文献

参考文献32

二级参考文献73

  • 1Kim H S,Pack Y J. β-SiC Thin Film Growth Using Microwave Plasma Activated CH4-SiH4 Sources[J].Thin Solid Films, 1999,341:42.
  • 2Seo J Y, Yoon S Y, Niihara K, et al. Growth and Microdardness of SiC Films by Plasma-enhanced Chemical Vapor Deposition[J].Thin Solid Films,2002,406:138.
  • 3Mckenzie D R, Mcfall D H, Smith B,et al.High Pressure Phases Producduced by low Energy Ion Implantation with Reference to Cubic Nitride [J].Nucl. Instr. and Meth. in Phys. Res. B, 1995,106: 90.
  • 4Kim K B,Kim S H, Characterization of Boron Nitride Films Synthesized by Helicon Wave Plasma-assisted Chemical Vapor Deposition[J].Diamond and Related Materials,2000,9:67.
  • 5Antoine D,Rod B,David M,et al.New Plasma-assisted Deposition Technique Using Helicon Actived Reactive Evaporation[J].Rev.Sci.Instrun,1995,66(4):2908.
  • 6Stevens J E,Sowa M J,Ceechi J L,et al. Helicon Plasma Source Excited by a Flat Spiral Coil[J].J.Vac.Sci.Technol.A,1995,13(5):2476.
  • 7Schubert Sh,Kaiser U.Hedler A,et al.Nanocrystal Formation in SiC by Ge Ion Implantation and Subsequent Thermal Annealing[J].J.Appl.Phys,2002,91(31):1520.
  • 8Yu M B, Yoon S F. Hydrogenated Nanocrystalline Silicon Carbide Films Synthesized by ECR-CVD and its Intense Visible Photoluminescence at Room Temperature[J].Thin Solid Films,2000,377:177.
  • 9Chew K, Rusli S F, Ahn Y J, et al. Hydrogenated Amorphous Silicon Carbide Deposition Using Electron Cyclotron Resonance Chemical Vapor Deposion under Hish Microwave Power and Strong Hydrogen Dilution [J]. J. Appl. Phys,2002,92(5) : 2937.
  • 10Berezhinsky L,Vlaskina S,Vlaskin V,et al.Energy Level Structure of Amorphous Silicon Carbide[J].Jan.J.Appl.Phys,2002,41(7A):4458.

共引文献44

同被引文献101

引证文献10

二级引证文献17

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部