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OLED用ITO导电玻璃的研究进展 被引量：5

THE RESEARCH PROGRESS OF ITO CONDUCTIVE GLASS USED FOR OLED
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摘要 氧化铟锡(ITO)膜的电阻率及表面粗糙度将影响有机电致发光器件(OLED)的发光效率及其使用寿命。通过选择适当的工艺条件以及表面处理可以改善ITO膜的表面粗糙度、可见光透过率、电导率和功函数,以提高OLED的稳定性、发光效率和使用寿命。对薄膜的光学和电学性能进行了分析,提出了改进工艺的方向。 The resistivity and surface roughness of Indium tin oxide （ITO） films will affect the light-emitting efficiency and lifetime of the organic light-emitting diodes（OLED） . Through the selection of processing parameters and surface modification, it is possible to improve the surface roughness, light transmission, conductivity and work function of ITO films, to improve to the stability, light-emitting efficiency and lifetime of OLED.
作者 戚祖强 许生 陈学康 范垂祯
机构地区 深圳豪威真空光电子股份有限公司 兰州物理研究所
出处 《真空与低温》 2005年第4期187-193,共7页 Vacuum and Cryogenics
基金 国家863课题资助(编号:2004AA303540)
关键词 ITO OLED 方阻 电阻率 表面粗糙度 可见光透过率 功函数 ITO OLED resistivity sheet resistance surface roughness transmission work function
分类号 O484 [理学—固体物理]
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参考文献37

  • 1SONG P K,AKAO H,KAMEI M,et al.Preparation and crystallization of tin-doped and undoped amorphous indium oxide films deposited by sputtering[J].Japanese Journal of Applied Physics,1999,38:5224～5226.
  • 2KIM H,PIQUE A,HORWITZ JS,et al.Electrical,optical and structural properties of indium tin oxide thin films for organic light-emitting devices[J].Applied Physics Letters,1999,74:3444～3446.
  • 3TADAYYON SM,GRIFFITHS K,NORTON PR,et al.Work function modification of indium-tin-oxide used in organic light emitting devices[J].Journal of Vacuum Science & Technology A:Vacuum,Surfaces,and Films,1999,17:1773～1778.
  • 4TAK Y H,KIM K B,PARK H G,et al.Criteria for ITO (indium-tin-oxide) thin film as the bottom electrode of an organic light emitting diode[J].Thin Solid Films,2002,411:12～16.
  • 5TRUBE J,LIEHR M.Experience and flexibility count in R & D[M].Precision,Applied Films Corp.,Longmont,CO,USA,2001.
  • 6AMINAKA E,TSUTSUI T,SAITO S.Electroluminescent behaviors in multilayer thin-film electroluminescent devices using 9,10-bisstyrylanthracene derivatives[J].Japanese Journal Applied Physics,1994,33:1061～1068.
  • 7OSADA T,KUGLER TH,BR?MS P,et al.Polymer-based light-emitting devices:investigations on the role of indium tin oxide (ITO) electrode[J].Synthetic Metals,1998,96:77～80.
  • 8许生 许沭华 范垂祯.ITO薄膜及其制备技术的发展[J].国际真空与薄膜,2004,2:59-62.
  • 9KLOPPEL A,TRUBE J,HOFFMANN U.Ultra-flat ITO films for light emitting polymer applications[M].Precision,Applied Films Corp.,Longmont,CO,USA,2000.
  • 10ZHENG D S,GAO Z Y,HE X Y,et al.Surface and interface analysis for copper phthalocyanine (CuPc) and indium-tin-oxide (ITO) using X-ray photoelectron spectroscopy (XPS)[J].Applied Surface Science,2003,211:24～30.

二级参考文献32

  • 1sabnis R W.color folter technology for liquid crytal displays[J].Displays,1999,20:119-129.
  • 2Kulkarmi A K,Schalz K H,Lim T S,et al. Electrical optical and structural characteristics of indium-tin-oxide thin films depositedon glass and polymer substrate[J].Thin Solid films,1997,308:1-7.
  • 3Salehi A.The effects of deposition rate and substrate temperature of ITO thin films on electrical and optical properties[J].ThinSolid Films,1998,324:214-218.
  • 4Morgen D V,Aliyu Y H,Bunce R W,et al.Annialing effects on optodlectronic properties of sputtered and thermally evaporated indium-tin-oxide films[J].Thin solid Films,1998,32:268-272.
  • 5Tang C W, Slyke Van S A. Organic electroluminescent diodes [J]. Appl Phys Lett ,1987, 51(12):913-915.
  • 6Aleksandra B D, Tsz Wai L, Chung Y K, et al. Surface treatments of indium tin oxide substrates: comprehensive investigation of mechanical, chemical, thermal,and plasma treatments [ J ]. Proc SPIE Int Soc Opt Eng ,2002,4 464(273) :273-280.
  • 7Wu C C, Wu C I, Sturm J C. Surface modification of indium tin oxide by plasma treatment: an effective method to improve the efficiency, brightness, and reliability of organic light emitting devices [J ]. Appl Phys Lett, 1997, 70(11):1 348-1 350.
  • 8Grozea D, Turak A, Feng X. Chemical structure of Al/LiF/Alq interfaces in organic light-emitting diodes [J].Appl Phys Lett ,2002,81(17) :3 173-3 175.
  • 9Ding X M, Hung L M, Cheng L F. Modification of the hole injection barrier in organic light-emitting devices studied by ultraviolet photoelectron spectroscopy [J].Appl Phys Lett, 2000, 76(19):2 704-2 706.
  • 10Kim J S , Lagel B, Moon E N. Kelvin probe and ultraviolet photoemission measurements of indium tin oxide work function: a comparison [ J ]. Synth Met, 2000,111:311-314.

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真空与低温
2005年 第4期

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