摘要
双光束双曝光和四光束单曝光是无掩模激光干涉光刻的两种典型方法,都容易利用现有光刻工艺,在不需掩模和高精度光刻物镜的情况下,用简单廉价光学系统在大视场和深曝光场内形成孔阵、点阵或锥阵等周期性图形。双光束双曝光法得到的阵列图形周期极限为λ/2;四光束单曝光的周期略大,为前者的2倍。模拟和实验结果表明,通过控制曝光和显影工艺,双光束双曝光较四光束单曝光能更灵活地得到孔阵或点阵,而四光束单曝光得到的图形孔与孔之间没有鞍点,较双光束双曝光形成的孔侧壁更陡。这两种方法在需要在大面积范围内形成孔或点这类周期阵列图形的微电子和光电子器件的制造领域有很好的应用前景。
Double exposure with two laser beams and single exposure with four laser beams are two typical ways for maskless interference photolithography, which can produce hole, dot or cone array pattern by conventional lithography process and a simple optical system without mask and precise lenses system. The limit pitch of array pattern by double exposure with two laser beams is λ/2, which by single exposure with four laser beams is √2-λ/2. Simulation and experiment results demonstrate that double exposure with two laser beams is more feasible to get hole, dot or cone array than single exposure with four laser beams by controlling exposure dose and developing process. And there are no saddle points between hole and hole by single exposure with four laser beams, pattern sidewall by the latter is much sharper than that by the former. Both of the methods have application prospect for production of photo-electronic devices and micro-electronic devices with periodic pattern such hole, dot or cone in large substrates.
出处
《光电工程》
EI
CAS
CSCD
北大核心
2005年第12期21-24,62,共5页
Opto-Electronic Engineering
基金
国家自然科学基金资助项目(60276043#)
关键词
干涉光刻
无掩模
双光束双曝光
四光束单曝光
Interferometric lithography
Maskless
Double exposure with two laser beams interference
Single exposure with four laser beams interference
