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MOCVD法制备一维定向ZnO晶须阵列及掺杂研究 被引量:9

Study on One-dimension Well-aligned ZnO Whiskers and Doping by MOCVD
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摘要 采用大气开放式MOCVD技术,以Zn(C5H7O2)2为前驱物,在玻璃和单晶硅基片上生长了沿c轴高度定向、规则排布的氧化锌晶须阵列。在此基础上,采用多气路输送不同金属有机源的方法,进行了ZnO晶须的掺杂,制备了掺铝元素的一维定向晶须阵列。XRD结果表明未掺杂ZnO晶须为六方纤锌矿结构,沿c轴高度取向;掺铝ZnO晶须晶体结构仍为六方纤锌矿结构,沿c轴择优取向。SEM结果显示,未掺杂的ZnO晶须阵列排布规则,长径比达到20;掺杂ZnO晶须随着铝掺杂浓度的增加,晶须的形貌及排布规则性变差。 Zinc oxide whisker arrays well-aligned along [ 0001 ] direction were grown on the substrates of glass and single crystal silicon by atmospheric metal organic chemical vapor deposition method (MOCVD). Multi-gas pipelines were used to transport different metal organic compounds to prepare Al doped ZnO whiskers. XRD results indicate that undoped ZnO whiskers have a wurtzite-type crystalline structure, and grow strongly along the ZnO [ 0001 ] direction. Al-doped ZnO whiskers also have a crystalline structure of wurtzite-type, but grow slightly weak along the ZnO [ 0001 ]. The SEM observation shows that undoped ZnO whiskers have a regular arrangement and an aspect ratio of about 20. The morphology of doped ZnO whiskers became more and more anomalous with the increase of Al content.
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2005年第6期972-976,共5页 Journal of Synthetic Crystals
基金 国家自然科学基金资助项目(No.50172002)
关键词 ZNO 一维定向材料 晶须 MOCVD ZnO one-dimension well-aligined material whisker MOCVD
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