摘要
在不同条件下采用LB技术制备了金纳米粒子单层膜，并利用SEM对所得到的薄膜的表面形貌进行表征。结果表明决定薄膜质量的关键因素是表面压。将表面压控制在22～26mN／m的范围内以较慢的拉膜速度在Si（100）基底上进行拉膜，可以得到大面积金纳米粒子的均匀致密单层膜。在室温下测量两点之间单层膜的I-V特性，得到了非欧姆特性，这是由电子在电场作用下发生隧穿产生的。
The monolayers of Au nanoparticles were prepared by means of LB technique under different conditions, then the monolayers were characterized by SEM. The results show that the key factor of preparation of Au nanoparticle monolayer is surface pressure. The monolayer of Au nanoparticles on the Si（100） substrate is large-scaled and even, when surface pressure range was from 22 mN/m to 26 mN/m with a slow deposition speed. The I-V curve of Au nanoparticle monolayer between two points on the fabricated LB film is measured at the room temperature. The non-ohmic characteristic is observed, due to electrons tunneling.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2006年第2期18-21,共4页
Electronic Components And Materials
基金
国家重点基础研究973计划资助项目(No:2006CB300406)
国家自然科学基金资助项目(No:50272039)
上海市科委交叉领域创新团队专项课题资助项目(No:03DZ14025)
上海科委重点科技资助项目(No:0452nm056)
