摘要
设计了一种新的CMOS带隙基准电压源.通过采用差异电阻间温度系数的不同进行曲率补偿,利用运算放大器进行内部负反馈,设计出结构简单、低温漂、高电源抑制比的CMOS带隙基准电压源.仿真结果表明,在VDD=2 V时,电路具有4.5×10-6V/℃的温度特性和57 dB的直流电源抑制比,整个电路消耗电源电流仅为13μA.
A high-order curvature-compensated CMOS bandgap reference was presented, in which a temperature-dependent resistor ratio generated by a high-resistive poly resistor and a diffusion resistor was used. The simulation results by Hspice showed that when VDD=2 V, this bandgap reference exhibited a temperature coefficient of 4.5 × 10^-6 V/℃ and PSRR of 57 dB, with total current consumption of power supply being less than 13μA.
出处
《华中科技大学学报(自然科学版)》
EI
CAS
CSCD
北大核心
2006年第2期36-38,共3页
Journal of Huazhong University of Science and Technology(Natural Science Edition)
基金
国家自然科学基金资助项目(60376019)
关键词
带隙基准电压源
曲率补偿
CMOS
bandgap voltage reference
curvature compensation
CMOS