摘要
通过在传统热丝化学气相沉积装置中引入直流等离子体,设计了直流等离子体一热丝化学气相沉积金刚石薄膜的设备,设备中既包括相互独立的灯丝电压和施加的偏压。通过调节偏压可以控制所形成的等离子体的偏流。在这一改进的系统中研究了金刚石薄膜形核和生长过程,利用扫描电子显微镜(SEM)、X射线衍射(XRD)分析了金刚石的样品,结果表明,施加偏压不仅能大大促进金刚石的形核密度(1010cm-2)、提高金刚石薄膜的生长速率,金刚石薄膜的取向也随机取向变为(111)定向生长。
A new hot filament chemical vapor deposition （HFCVD） with direct current plasma chamber was designed. This new design consists of a combination of two separate voltages for independent generation of ions in the gas phase. The plasma formed by bias voltage could control ion current density and dose, The influence of substrate bias on diamond nucleation and film quality was investigated by filed emission scanning electron microscopy （FE-SEM） and X-ray diffraction measurements （XRD）. It was observed that diamond nucleation together with diamond film＇s deposition rate increased with application of proper bias voltage, as evident from the SEM micrographs. With suitable deposition parameters,diamond nucleation on Si（ 111 ） substrate with a density of more than 10^10cm^-2 can be obtained. The polycrystalline diamond showed a change of grain crystallographic orientation from random orientation to preferential （ 111 ）.
出处
《金刚石与磨料磨具工程》
CAS
北大核心
2006年第1期1-4,共4页
Diamond & Abrasives Engineering
基金
山东省自然科学基金项目(Y2001F10)
关键词
直流等离子体
热丝化学气相沉积
金刚石形核及生长
direct current plasma
hot filament chemical vapor deposition
diamond nucleation and gmwth
