摘要
本文在前期对多孔硅发光机理研究的基础上，研究了离子注入对多孔硅光致发光的影响。实验表明离子注入除了可以降低多孔硅光致发光的强度外，还将使多孔硅的光致发光光谱谱峰产生蓝移、半高宽展宽，并在多孔硅发光谱带中产生一些发光减弱区和次峰结构。文中最后对实验现象做了解释。
in this paper the influence of ion implantation on the efficient visible photoluminescence(PL) of porous silicon is reported based on the previous study on mechanism of the PL. Theexperiments prove that the ion implantation not only weakens the intensity of the visiblephotoluminescence from porous silicon, but changes the PL property of it. After ion implantation,the PL spectra occur a blue shift, and the full width at half maximum (FWHM) stretches. There is asubpeak in the short wavelength direction of the PL spectrum and there is also a weakened PLposition(hole burn) in the spectrum. The above phenomena are also explained.
出处
《光子学报》
EI
CAS
CSCD
1996年第1期20-24,共5页
Acta Photonica Sinica
关键词
多孔硅
光致发光
离子注入
Porous silicon
Photoluminescence
Ion implantation
