摘要
以硝酸镍溶液为化学源,对于用不同方法沉积得到的非晶硅膜作晶化前驱物,都能予以不同程度的晶化.用VHF-PECVD方法获得的非晶硅膜作前驱物,易于去氢并更容易晶化.当化学源浓度不同时,晶化效果会存在一定差别,在一定的范围内,溶液浓度越高,晶化后形成的晶粒越大.退火气氛对晶化结果产生某些影响,可以发现,在N2气氛下退火,比在大气下有更好的晶化效果.最后对物理源与化学源作诱导金属的晶化结果进行了比较,结果表明,对诱导金属源而言,化学源显示出更为有效的晶化趋势.
The metal induced crystallization with chemical source on different silicon based films is studied. All amorphous silicon films deposited by LPCVD, RF-PECVD and VHF-PECVD have been crystallized. However, the a-Si films prepared by VHF- PECVD seems to have crystallized better. The crystallization was also affected by the concentration of the chemical solution. Under a certain conditions, the polycrystalline silicon crystallized with the solution of 10000ppm has larger grain size than that with 5000ppm solution. The annealing atmosphere also affects the crystallization process. Compared with the physical inducing source, the chemical inducing source gives different micro-crystallization structures. For the metal induced crystallization, the chemical source tends to be more advantageous.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2006年第2期825-829,共5页
Acta Physica Sinica
基金
国家十五"863"计划项目(批准号:2004AA303570)
国家自然科学重点基金(批准号:60437030)
教育部留学回国人员科研启动基金
天津市2002自然科学基金(批准号:023602011)
香港RGC资助的课题.~~
关键词
金属诱导晶化
多晶硅薄膜
低温制备
退火处理
metal induced crystallization, ploy-crystalline Si films, preparation at low temperature, annealing treatment
