摘要
本文考虑了基区复合电流，发射结空间电荷区复合电流，基区高注入引起的禁带变窄效应，Ｅａｒｌｙ效应，基区和发射区电导调制效应，有效基区展宽效应以及发射区电流集边效应，定量地模拟了硅双极晶体管电流增益在７７Ｋ和３００Ｋ时与集电极电流的关系，并且与实验结果相吻合，计算还表明在低温７７Ｋ时，电流增益的大注入效应由基区电导调制效应和发射区电流集边效应决定，而在３００Ｋ时则由有效基区展宽效应决定。
The current gain of silicon bipolar transistor has been quantitatively modeled at 77K and 300K in consideration of the carrier recombination currents in the emitter-base space charge region and in base,the extra base bandgap narrowing effect by the injection of minority-car-riers at high injection level, the Early effect, the conductivity modulation effects in base and in emitter,the effective base widening effect and the emitter current crowding effect. The obtained results are in agreement with the experimental data. The current gain is mainly determined by the conductivity modulation effect and emitter current crowding effect at 77K at high injection level,but at 300K,it is mainly determined by the effective base widening effect.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1996年第5期83-86,共4页
Acta Electronica Sinica
关键词
硅双极晶体管
电流增益
低温
高注入
定量模拟
Silicon bipolar transistor,Current gain,Low temperature,High injection,Quantitative modeling
