期刊文献+

An Improved Angle Polishing Method for Measuring Subsurface Damage in Silicon Wafers 被引量:2

一种改进的测量硅片亚表面损伤的角度抛光方法(英文)
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摘要 We present an improved angle polishing method in which the end of the cover slice near the glue layer is beveled into a thin,defect-free wedge,the straight edge of which is used as the datum for measuring the depth of subsurface damage. The bevel angle can be calculated from the interference fringes formed in the wedge. The minimum depth of the subsurface damage that can be measured by this method is a few hundred nanometers. Our results show that the method is straightforward, accurate, and convenient. 提出了一种改进的角度抛光方法来测量硅片的亚表面损伤.其原理是:经过研磨和化学机械抛光后,起保护作用的陪片靠近胶黏剂的一端形成一个无损伤的、完整的劈尖,劈尖的棱边作为测量亚表面损伤的基准;角度抛光的倾斜角可通过劈尖上面产生的干涉条纹准确地测量得到.采用这种方法可以方便、准确地测量硅片由切割、研磨和磨削引起的亚表面损伤,其能够测量的最小损伤深度为几百纳米.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第3期506-510,共5页 半导体学报(英文版)
基金 国家自然科学基金(批准号:50390061) 国家杰出青年科学基金(批准号:50325518)资助项目~~
关键词 silicon wafer subsurface damage angle polishing defect etching wedge fringes 硅片 亚表面损伤 角度抛光 缺陷腐蚀 劈尖干涉
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参考文献9

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同被引文献20

  • 1郭东明,康仁科,金洙吉,霍凤伟,田业冰,郭晓光.大尺寸硅片超精密磨削平整化加工机理与技术[J].数字制造科学,2007(4). 被引量:3
  • 2黄于林,唐进元,陈海锋,郎献军.45钢超声辅助干磨削工艺参数与表面性能参数实验研究[J].制造技术与机床,2013(12):27-31. 被引量:6
  • 3HAN Guangping ,LIU Kai,WANG Xiuhong.MECHANICAL PROPERTIES AND SIZE EFFECTS OF SINGLE CRYSTAL SILICON[J].Chinese Journal of Mechanical Engineering,2006,19(2):290-293. 被引量:4
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  • 10LI Xiaoping CAI Minbo RAHMAN Mustafizur.NANOSCALE CUTTING OF MONOCRYSTALLINE SILICON USING MOLECULAR DYNAMICS SIMULATION[J].Chinese Journal of Mechanical Engineering,2007,20(5):8-11. 被引量:2

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