摘要
以氢气稀释的硅烷(SiH4)和硼烷(B2H6)为气源,利用等离子体增强化学气相沉积法(PECVD)制备出p型a-Si薄膜.采用铝诱导晶化技术对不同厚度的铝膜对a-Si薄膜晶化的影响进行了研究.实验中发现,铝膜溅射为10 s的非晶硅薄膜样品在450℃下退火10 min后,p型a-Si结构仍为非晶态,铝膜溅射为20 s的非晶硅薄膜在450℃下退火20 min后,p型a-Si薄膜开始晶化为poly-Si薄膜,并且铝膜厚度越厚,则a-Si薄膜晶化程度越强.
Polyerystalline silicon films were fabricated by aluminum-induced crystallization. These films are prepared by plasma-enhaneed ehemieal vapor deposition teehnology from hydrogen-diluted SiH4 and B2H6. The effect of thickness of aluminum films on the mierostrueture and morphology were investigated. The results were analyzed by XRD, RAMAN and SEM. The thickness of aluminum film was found to play a eritieal role in the extent of erystallization of a-Si thin film. The experiment indieate that a-Si thin films with thiekness of aluminum films for sputtering time 10 s were amorphous structure after annealing 450 12 for 20 min, a-Si films with thickness of aluminum film for sputtering time 20 s began to crystallize after annealing at 450 0（2 for 20 min, and the erystallinity of a-Si thin films was enhanced obviously with increment of thickness of aluminum films.
出处
《感光科学与光化学》
EI
CSCD
2006年第2期87-92,共6页
Photographic Science and Photochemistry
基金
武汉理工大学硅酸盐材料工程教育部重点实验室开放基金(SYSJJ2005-12)
关键词
金属铝诱导晶化
快速退火
a-Si薄膜
poly-Si薄膜
aluminum-induced crystallization
rapid thermal annealing
polycrystalline silicon thinfilms
amorphous silicon thin films
