摘要
Cr-doped CdS nanowires were synthesized in large scale through thermal co-evaporation of CdS and metal Cr powders. General morphology, detailed microstructure and optical properties were characterized using various techniques. Devices consisting of individual Cr-doped CdS nanowire were fabricated and they exhibited remarkable rectifying characteristics. Ⅰ-Ⅴ curves of individual Cr-doped CdS nanowire devices demonstrate that the present nanowires are n-type doped and have high conductivity （10.96 Ω^-1cm^-1）, indicating great potential applications in nanoscale electronic and optoelectronic devices.
Cr-doped CdS nanowires were synthesized in large scale through thermal co-evaporation of CdS and metal Cr powders. General morphology, detailed microstructure and optical properties were characterized using various techniques. Devices consisting of individual Cr-doped CdS nanowire were fabricated and they exhibited remarkable rectifying characteristics. Ⅰ-Ⅴ curves of individual Cr-doped CdS nanowire devices demonstrate that the present nanowires are n-type doped and have high conductivity （10.96 Ω^-1cm^-1）, indicating great potential applications in nanoscale electronic and optoelectronic devices.
基金
Project supported by the key project of Zhejiang Provincial Natural Science Foundation （Grant No Z605131） and the National Natural Science Foundation of China （Grant No 60571029）. Tang Wei-Hua was supported by the 100-outstanding Talents Project of Chinese Academy of Sciences and the Creative Research Group of National Natural Science Foundation of China （Grant No 60321001）.
