摘要
介绍了共振隧穿二极管(RTD)中电荷积累效应,利用顺序隧穿模型分析了RTD中有电荷积累时器件各部分电压的再分布;并结合电压降局限于双势垒区和遍及整个RTD的两种情况,建立了电荷和电流方程;最后利用电荷积累效应解释了负阻区本征双稳态特性。
The electric charge accumulation effect in RTD was introduced. The electrical voltage redistribution along the device as charge accumulated was analysed by sequential tunneling model. For both situations of voltage drop located in DBS and through whole RTD, the equations of electric charge and electric current were established. Finally the intrinsic bistability in negative region was explained by the electric accumulation effect.
出处
《微纳电子技术》
CAS
2006年第4期172-176,共5页
Micronanoelectronic Technology
