摘要
采用实验研究的方法，通过比较分析阱注剂量、掺杂杂质类型及调整注入剂量对ＰＭＯＳ管开启电压的影响，很好地解决了开启电压的工艺控制问题，同时又保证了ｐｎ结击穿电压的要求。
An experiment was conducted to investigate the effects of the implant dosage,dopant types and the adjustment of dosage on the threshold voltage of PMOS transistor ( V PT ) in E 2PROMs.In the experiment,a set of curves were obtained that reflect the dependence of V TP on the related process parameters.Using these curves, V TP can be adjustable in -0 5～1 2 V range with good accuracy and repeatability.
出处
《微电子学》
CAS
CSCD
1996年第5期345-347,共3页
Microelectronics
