摘要
探讨如何用电子回旋共振化学气相沉积(ECRCVD)设备制备非晶态氮化硅介质膜和光学膜。通过改变工艺条件中的微波功率、硅烷(S iH4)、氮气(N2)、氩气(Ar)流量、样品台温度等,控制和优化氮化硅(S iNx)折射率和生长速率,得到了各工艺条件对氮化硅(S iNx)折射率和生长速率影响曲线;通过测量用本方法制备的高反膜系的反射率,证实了镀光学膜时理论值与实际值符合的很好。
This article is about how to use Electron Cyclotron Resonance Chemical Vapor Deposition （ECRCVD） method to prepare amorphous silicon nitride （SIN：）film. By changing microwave power, SiH4flow, Ar flow,N2flow or the temperature of the substrate in the process we can control and optimize the refraction index and growth ratio of SiN2. In each case we get related graphics of the process parameter with refraction index and growth ratio. The reflection ratio of measurement shows a better fit to the theory.
出处
《绵阳师范学院学报》
2005年第5期69-73,共5页
Journal of Mianyang Teachers＇ College
