期刊文献+

平面型硅光电二极管PIN的研制及其基本性能测试

R&D of Si PIN diode and its performance test
下载PDF
导出
摘要 为满足CERN/ALICE超高能重离子对撞实验光子谱仪的需要,首次采用高阻硅材料,并利用一些特殊工艺,研制了用于钨酸铅晶体探测器读出单元的硅光电二极管PIN。PIN的灵敏区面积为16mm×17mm,常温漏电流小于5nA,紫光区量子效率82%,全耗尽结电容为110—120pF。由PIN与电荷灵敏前置放大器组成的读出系统的噪声水平,在-25℃下小于600个等效噪声电荷,并经过了长期性能稳定性的考验。开发研制的大面积PIN硅光管全面达到ALICE/PHOS国际招标所规定PIN硅光管性能的指标。 The silicon PIN photodiode is an important part of the PbWO4 detector read-out system that will be used in the Photon Spectrometer (PHOS) in the CERN/ALICE experiment. High specific resistivity n-type silicon material is used for the first time in our R&D of PIN, and special techniques are employed in the production process to ensure low dark current, high quantum efficiency, and low noise. The PIN diode has a sensitive area of 16 mm×17 mm. The leak current is lower than 5 nA at room temperature, the quantum efficiency in the wavelength range of 400---500 nm is about 82%, and the junction capacity is about 110--120 pF The noise level (ENC) of PIN+PreAmp system is lower than 600 e at -25 ℃. The PIN diodes have passed the long-term stability test. The performance of our R&D PIN photo-diodes has overall met the ALICE/PHOS requirement.
出处 《核技术》 CAS CSCD 北大核心 2006年第4期305-308,共4页 Nuclear Techniques
基金 国家自然科学基金资助项目(00121140488)
关键词 PIN 结电容 漏电流 量子效率 等效噪声电荷 PIN, Junction capacity, Leakage current, Quantum efficiency, ENC
  • 相关文献

参考文献2

  • 1Schukraft J,Manko V,Klempt W,et al.ALICE Technical Design Report of the Photon Spectrometer,Genevese:CERN/LHCC 99-4 ALICE TDR2,1999,33-36
  • 2Sueva D,Spassov V,Chikov N,et al.IEEE Trans Nucl Sci,1993,40(3):257-261

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部