摘要
分析了现有线边缘粗糙度(L ine Edge Roughness,LER)表征参数的不足,针对二维LER的表征参数信息量缺失,提出了基于子波中面的LER参数表征.子波理论给LER的综合评定提供了恰当的工具.利用子波在空间和频率域内都具有的定位特性,可以在任意细节上分析信号特征,且构造的子波基准线不存在拟合误差,可以分析LER来源,改进刻线边缘加工工艺.给出了基于子波分析的几个LER评定参数,并分析了这些参数如何应用于工艺和元件电气性能的表征.
Multi-scale analysis based on wavelet theory has the ability to describe the topography of the sidewall in different dimension, and the measurement-standard-plane based wavelet theory to analyze LER does not have fitting error which is benefit for quantifying the error of processing and analyzing the origin of LER. At last, some 3D parameters based on this measurement-standard-plane to evaluate LER are given. The meanings of these parameters also are described.
出处
《哈尔滨工业大学学报》
EI
CAS
CSCD
北大核心
2006年第4期532-534,545,共4页
Journal of Harbin Institute of Technology
关键词
临界尺寸
纳米计量
刻线边缘粗糙度
多分辨分析
critical dimension
nano-scale measurement
line edge roughness
multi-scale analysis