摘要
在分析现有过温保护电路的基础上,针对它们电路结构复杂、功耗较高、工作电压高等缺点提出了一种用于集成电路内部的采用BiCMOS工艺的过温保护电路,电路结构简单、功耗较低、工作电压低、抗干扰能力强,对温度的迟滞特性避免了热振荡对芯片带来的危害。采用0.6μmBiCMOS工艺的HSPICE仿真结果表明,该电路对因电源电压、和工艺参数变化而引起的温度迟滞特性的漂移具有很强的抑制能力。
Analysing the existing thermal-shutdown circuits, and aiming at their structure complexity, high power dissipation and high operating voltage, a new BiCMOS thermal-shutdown circuit suitabled for Integrated Circuit chips is presented. It has simple structure, low power dissipation, low operating voltage and good noise rejection. The temperature hysteresis solves the problem of thermal-oscillation. HSPICE simulation with 0. 6μm n -well BiCMOS technology shows that the circuit has excellent capability of power supply rejection and process insensitivity.
出处
《电子器件》
CAS
2006年第2期357-359,364,共4页
Chinese Journal of Electron Devices
关键词
过温保护电路
BICMOS
PTAT电流源
thermal-shutdown circuit
BiCMOS
current source PTAT（Propotional fo Absolute Temperature）
