摘要
研究了以10keV X射线为辐照源对注氧隔离(SIMOX)SOI MOSFET器件进行辐照的总剂量效应。采用ARACOR 10keV X射线对埋氧层加固样品与未加固的对比样品在开态和传输门态两种辐照偏置下进行辐照,分析了器件的特性曲线,并计算了SOI MOS器件前栅与寄生背栅晶体管辐照前后的阈值电压的漂移。实验结果表明,加固样品的抗辐射性能优越,且不同的辐照偏置对SOI MOSFET器件的辐照效应产生不同的影响。
The effect of total-dose irradiation with a 10keV X-ray source on separation by implanted oxygen （SIMOX） SOl MOSFET was studied. The hardened sample and the control sample were irradiated by ARACOR 10keV X-ray source with ON and Pass-Gate biases. It has been demonstrated the hardened sample showed remarkable tolerance in total dose irradiation and the different influence was caused by different biases during the irradiation on the SOI MOSFET.
出处
《半导体技术》
CAS
CSCD
北大核心
2006年第5期357-360,共4页
Semiconductor Technology
基金
国家重点基金项目(6140438)
国家重点实验室基金项目(51433020101DZ1501)
