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薄膜体声波谐振器及其应用 被引量:3

Thin Film Bulk Acoustic Resonators and Applications
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摘要 综合阐述薄膜体声波谐振器技术,简要介绍了薄膜体声波谐振器技术及其发展历程,对其物理模型和等效电路模型进行了回顾,对该器件的三种结构和及其制作方法进行了分析,并讨论了其使用的压电材料和电极材料,最后给出了该器件在微波领域的典型应用和相关指标。 The thin film bulk acoustic resonators (FBAR) technology was surveyed. After a general and historical introduction to FBAR, a review of two types of models FBAR was given. Three device structures and their fabrications were analyzed, and the suitable piezoelectric materials and electrode materials for FBAR were discussed. Finally, an overview of the most important microwave applications is given, along with relevant performance data.
出处 《半导体技术》 CAS CSCD 北大核心 2006年第5期377-381,共5页 Semiconductor Technology
基金 ASIC国防重点实验室资助项目(51432050205DZ2304)
关键词 体声波 谐振器 滤波器 bulk acoustic resonator filter
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参考文献9

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同被引文献23

  • 1王德苗,金浩,董树荣.薄膜声体波谐振器(FBAR)的研究进展[J].电子元件与材料,2005,24(9):65-68. 被引量:9
  • 2张凯,顾豪爽,李位勇,胡光,胡明哲.AlN薄膜体声波谐振器的制备与性能分析[J].压电与声光,2007,29(1):4-5. 被引量:6
  • 3何杰,刘荣贵,马晋毅.薄膜体声波谐振器(FBAR)技术及其应用[J].压电与声光,2007,29(4):379-382. 被引量:11
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  • 5KANGYR, KANGSC, PAEKKK, etal. Air-gap type film bulk acoustic resonator using flexible thin substrate[J]. Sensors and Actuators, 2005, 117(1) : 62-70.
  • 6HARA M, KUYPERS J, ABE T, et al. MEMS based thin film 2 GHz resonator for CMOS integration [J]. IEEE MTT-S Digest, 2003, 3: 1797-1800.
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  • 10NAKAMURA K, KANBARA H. Theoretical analysis of a piezoelectric thin film resonator with acoustic quarter-wave multilayers[J]. IEEE International Frequency Control Symposium, 1998 : 876-881.

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