摘要
综合阐述薄膜体声波谐振器技术,简要介绍了薄膜体声波谐振器技术及其发展历程,对其物理模型和等效电路模型进行了回顾,对该器件的三种结构和及其制作方法进行了分析,并讨论了其使用的压电材料和电极材料,最后给出了该器件在微波领域的典型应用和相关指标。
The thin film bulk acoustic resonators (FBAR) technology was surveyed. After a general and historical introduction to FBAR, a review of two types of models FBAR was given. Three device structures and their fabrications were analyzed, and the suitable piezoelectric materials and electrode materials for FBAR were discussed. Finally, an overview of the most important microwave applications is given, along with relevant performance data.
出处
《半导体技术》
CAS
CSCD
北大核心
2006年第5期377-381,共5页
Semiconductor Technology
基金
ASIC国防重点实验室资助项目(51432050205DZ2304)
关键词
体声波
谐振器
滤波器
bulk acoustic
resonator filter