摘要
用微波ＰＣＶＤ法将掺硼金刚石膜淀积在Ｓｉ３Ｎ４基片上．用Ｔｉ薄膜作为欧姆接触电极蒸发在金刚石膜表面上．为防止Ｔｉ在高温下氧化，上面镀上了Ａｕ薄膜，从室温到６００℃范围内测试了这些金刚石膜样品的电阻（Ｒ），发现Ｔ１和Ｒ之间呈线性关系，若改变掺硼浓度以及热处理条件可以控制掺硼金刚石膜的热敏特性，结果表明掺硼金刚石膜显示了高的敏感性和好的稳定性，是一种优良的热敏电阻材料．
Boron-doped diamond films are deposited on the substrate Si3N4 by using microwave PCVD. Ti films are evaporated on the diamond films as ohmic contact electrodes, and then Au films are covered on the Ti films in order to protect the Ti films from oxygenation in high temperature. The electrical resistances R of diamond film samples are measured under a temperature (T) region from room temperature to 600℃. The linear relationship between 1 / T and R can be found. It is thought that thermal-sensitive characteristics of boron-doped diamond films can be controlled by changing the boron doping level and heat-treatment conditions. Results show that the boron-doped diamond film exhibites a high sensitivity and good stability and is a kind of excellent material of thermistor.
出处
《材料研究学报》
EI
CAS
CSCD
1996年第4期415-418,共4页
Chinese Journal of Materials Research
关键词
掺硼
金刚石膜
热敏特性
boron-doped, diamond films, thermal-sensitive characteristics
