摘要
在未来10～15年内有两条主流将引导IC产业的发展:一条是延续摩尔定律、纳米SiCMOS技术,以提高芯片的速度和频率;另一条是超越摩尔定律。后者分成三个支流:双核和多核处理器、纳米SiCMOS技术,以提高芯片性能;在单个封装内集成整个系统,纳米SiCMOS技术,以提高芯片容量和功能;采用纳米技术研发纳米CMOS器件以外的纳米器件,如碳纳米管、共振隧穿器件等,以突破SiCMOS技术为主。
Two main currents for leading the development of IC industry in the future 10-15 years were given. One is to contirme Moore＇s law and nano Si CMOS technology for raising the velocity/frequency, and the other is to overstep Moore＇s law, including double cores and multi cores MPU, nano Si CMOS technology, for raising the performance; integrating the system in a package, nano Si CMOS technology, for raising the capacity/function; developing the nano device beyond the nano CMOS device, such as carbon nanotube, resonant tunnelling diode etc, for breaking through the Si CMOS technology.
出处
《微纳电子技术》
CAS
2006年第6期261-265,共5页
Micronanoelectronic Technology
