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Nickel-disilicide-assisted excimer laser crystallization of amorphous silicon 被引量:1

Nickel-disilicide-assisted excimer laser crystallization of amorphous silicon
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出处 《Chinese Physics B》 SCIE EI CAS CSCD 2006年第6期1310-1314,共5页 中国物理B(英文版)
基金 Project supported by the National High Technology Development Program of China (Grant No 2002AA303250) and by the National Natural Science Foundation of China (Grant No 60576056).
关键词 多晶硅 受激准分子激光器结晶 结晶化 界面晶粒生长 polycrystalline silicon, excimer laser crystallization, Ni-disilicide, Ni-metal-induced lateral crystallization, two-interface grain growth
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