摘要
通过高温氧化处理得到的多孔硅，其阴极射线发光谱呈现明显的三峰结构．峰强随电子束辐照时间而下降．对光致发光很弱的样品，电子束辐照后光致发光明显地增强．红外透射谱及Ｒａｍａｎ谱分析表明样品基本上成为ＳｉＯｘ．进一步分析指出三峰可能来源于ＳｉＯｘ中的缺陷中心发光．电子束辐照在ＳｉＯｘ禁带中引进了一些缺陷能级，通过这些能级使得紫外线可激发样品发光，出现光致发光增强的现象．
igh temperature oxidized porous silicon has been investigated.Three peaks can be seen on the cathodeluminescent(CL)spectrum.The intensity of these peaks decreases fast with electron irradiation.For poor photoluminescent(PL)sample,the PL intensity enhances obviously after electron irradiation.The IR and Raman spectra of high temperature oxidized porous silicon show that whose strueture is mainly SiOx.Further analysis shows that three peaks may come from the luminescence of defect centers in SiOx.As electron irradiation,some other defects are generated in SiOx.This makes the CL intensity decrease and only through these defects the luminescent centers can be excited by UV light,therefore the sample's PL intensity is increased.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1996年第2期111-115,共5页
Chinese Journal of Luminescence
基金
国家自然科学基金
关键词
多孔硅
阴极射线
发光
高温氧化
缺陷中心
porous silicon,cathodeluminescence,high temperature oxidized,defect center
