摘要
运用Kronig-Penney(KP)模型的新形式,研究半导体超晶格中子带间跃迁的光学双稳特性。由二子能带模型密度矩阵方法,导出了子带间光跃迁的Maxwell-Bloch(MB)方程。从MB方程的定态解出发,得到了环形腔中超晶格子带间跃迁的光学双稳态方程,进而讨论了这种光学双稳的特点以及实现的条件。
The optical bistability ( OB ) of intersubband transitions in a semiconductor superlattice is stu -died by applying the general formalism of the Kronig-Penney model and density matrix method. The Maxwell-Bloch (MB) equations of two-subband model are derived, and the OB state equation for a ring cavity is obtained from the stationary solution of the MB equations. The conditions for realizing the OB and its characteristics are discussed.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1996年第6期929-939,共11页
Acta Physica Sinica